DPG15I400PM low loss and soft recovery high performance fast recovery diode single diode hiperfred2 1 3 part number DPG15I400PM backside: isolated fav rr tns 45 rrm 15 400 = v= v i= a features / advantages: applications: package: planar passivated chips very low leakage current very short recovery time improved thermal behaviour very low irm-values very soft recovery behaviour avalanche voltage rated for reliable operation soft reverse recovery for low emi/rfi low irm reduces: - power dissipation within the diode - turn-on loss in the commutating switch antiparallel diode for high frequency switching devices antisaturation diode snubber diode free wheeling diode rectifiers in switch mode power supplies (smps) uninterruptible power supplies (ups) to-220fp industry standard outline rohs compliant epoxy meets ul 94v-0 soldering pins for pcb mounting base plate: plastic overmolded tab reduced weight isolation voltage: v~ 2500 ixys reserves the right to change limits, conditions and dimensions. 20131101a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG15I400PM n s 4 a t vj =c reverse recovery time a 5.5 45 70 n s i rm max. reverse recovery current i f =a; 15 25 t=125c vj -di f =a/s 200 /dt t rr v r =v 270 t vj =c 25 t=125c vj v = v symbol definition ratings typ. max. i r v i a v f 1.39 r 4.2 k/ w r min. 15 v rsm v 1 t = 25c vj t = c vj m a 0.18 v = v r t = 25c vj i = a f v t = c c 90 p tot 35 w t = 25c c r k/ w 15 400 max. non-repetitive reverse blocking voltage reverse current, drain current forward voltage drop total power dissipation conditions uni t 1.63 t = 25c vj 150 v f0 v 0.84 t = c vj 175 r f 16.5 m ? threshold voltage slope resistance for power loss calculation only a 150 v rrm v 400 max. repetitive reverse blocking voltage t = 25c vj c j 16 j unction capacitance v = v 200 t = 25c f = 1 mhz r vj p f i fsm t = 10 ms; (50 hz), sine; t = 45c vj max. forward surge current v = 0 v r t = c vj 175 190 a 400 fav d = rectangular 0.5 average forward current thermal resistance junction to case thjc thermal resistance case to heatsink thch fast diode 400 0.50 ixys reserves the right to change limits, conditions and dimensions. 20131101a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG15I400PM ratings logo part number datecode assembly code product marking assembly line xxxxxx yyww z abcdef d p g 15 i 400 pm part number diode hiperfred extreme fast single diode to-220acfp (2) = = = current rating [a] reverse voltage [v] = = = = package t op c m d nm 0.6 mounting torque 0.4 t vj c 175 virtual junction temperature -55 weight g 2 symbol definition typ. max. min. conditions operation temperature unit f c n 60 mounting force with clip 20 v v t = 1 second v t = 1 minute isolation voltage mm mm 3.2 2.7 2.5 2.5 d spp/app creepage distance on surface | st riking distance through air d spb/apb terminal to backside i rms rms current 35 a per terminal 150 -55 terminal to terminal to-220fp delivery mode quantity code no. part number marking on product ordering 50/60 hz, rms; i 1 ma isol DPG15I400PM 503814 tube 50 DPG15I400PM standard 2080 2500 isol t stg c 150 storage temperature -55 threshold voltage v 0.84 m ? v 0 max r 0 max slope resistance * 13.3 equivalent circuits for simulation t = vj i v 0 r 0 fast diode 175 c * on die level ixys reserves the right to change limits, conditions and dimensions. 20131101a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG15I400PM note: all metal surface are matte pure tin plated except trimmed area. ? p a a1 h a2 q l1 d e l b b1 c e 13 d1 min max min max a 4.50 4.90 0.177 0.193 a1 2.34 2.74 0.092 0.108 a2 2.56 2.96 0.101 0.117 b 0.70 0.90 0.028 0.035 b1 1.27 1.47 0.050 0.058 c 0.45 0.60 0.018 0.024 d 15.67 16.07 0.617 0.633 d1 0 1.10 0 0.043 e 9.96 10.36 0.392 0.408 e h 6.48 6.88 0.255 0.271 l 12.68 13.28 0.499 0.523 l1 3.03 3.43 0.119 0.135 ?p 3.08 3.28 0.121 0.129 q 3.20 3.40 0.126 0.134 dim. millimeters inches 2 .54 bs c 0.100 bsc 1 3 outlines to-220fp ixys reserves the right to change limits, conditions and dimensions. 20131101a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
DPG15I400PM 0 100 200 300 400 500 600 20 40 60 80 100 120 0 40 80 120 160 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 k f t vj [c] 0 100 200 300 400 500 600 0 2 4 6 8 10 12 14 16 18 0 50 100 150 200 250 300 350 400 450 v fr [v] 0 100 200 300 400 500 600 2 4 6 8 10 12 0 100 200 300 400 500 600 0.0 0.1 0.2 0.3 0.4 0.0 0.5 1.0 1.5 2.0 2.5 0 10 20 30 40 50 60 70 80 i rm [a] q rr [ c] i f [a] v f [v] -di f /dt [a/ s] t rr [ns] v fr t fr i rm q rr 30 a 15 a -di f /dt [a/ s] -di f /dt [a/ s] 7.5 a 15 a -di f /dt [a/ s] 0.001 0.01 0.1 1 10 0 1 2 3 4 t[s] z thjc [k/w] 0 100 200 300 400 500 600 0 5 10 15 20 25 e rec [ j] -di f /dt [a/ s] i f = 30 a i f = 15 a i f = 7.5 a i f = 30 a i f = 15 a i f = 7.5 a fig. 1 forward current i f versus v f fig. 2 typ. reverse recov. charge q rr versus -di f /dt fig. 3 typ. peak reverse current i rm versus -di f /dt fig. 4 dynamic parameters q rr ,i rm versus t vj fig. 5 typ. recovery time t rr versus -di f /dt fig. 6 typ. peak forward voltage v fr and t fr versus di f /dt fig. 7 typ. recovery energy e rec versus -di f /dt t fr [ns] fig. 8 transient thermal resistance junction to case 7.5 a t vj = 25c 150c t vj = 125c v r =270 v t vj = 125c v r = 270 v t vj = 125c v r =270 v t vj = 125c i f = 15 a v r = 270 v t vj = 125c v r = 270 v i f =30a fast diode ixys reserves the right to change limits, conditions and dimensions. 20131101a data according to iec 60747and per semiconductor unless otherwise specified ? 2013 ixys all rights reserved
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